Y. Yoshida, “Iron impurities in silicon solar cell under light illumination” (招待講演), 7th Seeheim Workshop on Mössbauer Spectroscopy, 2011 June, Frankfurt
G. Langouche and Y. Yoshida, Ion Implantation (チュトリアル招待講演), The 31st International Conference on the Applications of the Mössbauer Effect (ICAME2011), 2011年9月、神戸
Y. Yoshida, K. Suzuki, Y. Kobayashi, T. Nagatomo, Y. Akiyama, K. Yukihira, K. Hayakawa, H. Ueno, A. Yoshimi, D. Nagae, K. Asahi and G. Langouche, “57Fe Charge State in mc-Si Solar cells under Light Illumination After GeV- Implantation of 57Mn”, The 31st International Conference on the Applications of the Mössbauer Effect (ICAME2011), 2011年9月, 神戸
K. Hayakawa, Y. Tsukamoto, Y. Akiyama, M. Kurata, K. Yukihira, H. Soejima, and Y. Yoshida,
“Deployment of System and technology for Mössbauer Spectroscopic Microscope”, The 31st International Conference on the Applications of the Mössbauer Effect (ICAME2011), 2011年9月, 神戸
K. Tanaka, Y. Akiyama, K. Hayakawa, K. Yukihira and Y. Yoshida, “Mapping Analyses of Fe-diffused mc-Si using Mössbauer Microscope and Photoluminescence”, The 31st International Conference on the Applications of the Mössbauer Effect (ICAME2011), 平成23年9月, 神戸
Y. Yoshida, Y. Tsukamoto, Y. Akiyama, K. Hayakawa, K. Yukihira, K. Tanaka, Y. Ino, H. Soejima, Y. Harada, K. Ogai, H. Kamiya and K. Moriguchi、“A Prototype of Mössbauer Spectroscopic Microscope”, ICAME2013, Opatija, 2013.9.1-6/ Oral presentation.
Y. Yoshida, “Mössbauer spectroscopy for detecting the Fe distribution in mc-Si”, IHP, Frankfurt (Oder). 2013. 9. 10
Y. Yoshida, “Direct Observation of Carrier Trapping Processes on Fe impurities in mc-Si Solar Cells”, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 2013. 9. 12
Y. Yoshida, Y. Tsukamoto, K. Hayakawa, K. Yukihira, K. Tanaka, Y. Ino, H. Soejima, Y. Harada, K. Ogai, H. Kamiya and K. Moriguchi, “Fe Mapping in mc-Si solar cell by Mössbauer Spectroscopic microscope”, DRIP, Warsaw, 2013.9.15-19/ Oral presentation.
Y. Yoshida, Y. Tsukamoto, M. Ichino and K. Tanaka, “Direct observation of carrier trapping processes on Fe impurities in mc-Si solar cells”, GADEST, 2013.9.22-27/ Oral presentation.
K. Tanaka, Y. Tsukamoto, Y. Ino, Y. Yoshida: “Mössbauer Spectroscopic Study on Fe Impurities in Multi-Crystalline Si Wafers Before and After PL Mapping”, 7th International Workshop on Crystalline Silicon Solar Cells，Fukuoka, Japan, Oct. 25 2013/ Oral presentation.
Y. Ino, K. Tanaka, Y. Yoshida: “Iron impurities and defect structures in silicon single crystal observed by Mössbauer spectroscopy”, 7th International Workshop on Crystalline Silicon Solar Cells，Fukuoka, Japan, Oct. 2013/ Poster Presentation.
Y. Yoshida：“Charge states of substitutional and interstitial iron impurities in silicon observed by Mössbauer spectroscopy”（招待講演），12th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors (BIAMS12), NIMS，Tukuba 2014年6月.
Y. Yoshida: “Diffusion and point defects in metals and semiconductors (Tutorials)”, 33rd International Conference on the Applications of the Mössbauer Effect (ICAME 2015), "13-Sep-15, Hamburg, Germany).
Y. Ino, H. Soejima, K. Hayakawa, K. Yukihira, K. Tanaka, H. Fujita, T. Watanabe, K. Ogai, K. Moriguchi, Y. Harada, and Y. Yoshida: "3D-Mössbauer Spectroscopic Microscope for mc-Si solar cell evaluation", 33rd International Conference on the Applications of the Mössbauer Effect (ICAME 2015), "18-Sep-15, Hamburg, Germany).
Y. Yoshida, Y. Ino, K. Tanaka: “Mössbauer Spectroscopy on Fe impurities in Si materials”, Gettering and Defect Engineering in Semiconductor Technology XVI (GADEST 2015) (22-Sep-15, Bad Staffelstein, Germany).
Y. Ino, K. Tanaka, K. Sakata, Y. Yoshida: “Direct observations of Fe impurities in Si with different Fermi levels by Mössbauer spectroscopy”, Gettering and Defect Engineering in Semiconductor Technology XVI (GADEST 2015) (22-Sep-15, Bad Staffelstein, Germany).
Y. Yoshida, Y. Ino, K. Matsumuro, T. Watanabe, H. Fujita, K. Hayakawa, K. Yukihira, K. Ogai, K. Moriguchi, Y. Harada, and H. Soejima,“Diffusion Study on Fe in Si crystals by Mössbauer Spectroscopic Microscope”, the International Conference on HYPERFINE Interactions and their Applications (HYPERFINE 2016), (07-Jul-16, Leuven, Belgium).
Y. Ino, T. Watanabe, K. Hayakawa, K. Yukihira, K. Matsumuro, H. Fujita, K. Ogai, K. Moriguchi, Y. Harada, H. Soejima, and Y. Yoshida, “A new set-up of Mössbauer Spectroscopic Microscope to study the corre-lation between Fe impurities and lattice defects in Si crystals”, The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), ThP-G09-7, (11-Aug-16, Nagoya, Japan).
Y. Ino, T. Watanabe, K. Hayakawa, K. Yukihira, H. Fujita, K. Ogai, K. Moriguchi, H. Soejima, Keiko Ogai, Yoshihito Harada, and Y. Yoshida, “A new evaluation method of Fe impurities in mc-Si solar cells by Mössbauer Spectroscopic Microscope”, The 26th edition of the International Photovoltaic Science and Engineering Conference (PVSEC-26), 2.4.3h, (27-Oct-16, Singapore).
Y. Ino, T. Watanabe, K. Matsumuro, K. Hayakawa, K. Yukihira, H. Fujita, K. Ogai, K. Moriguchi, Y. Harada, H. Soejima, and Y. Yoshida, “The application of Mössbauer Spectroscopic Microscope to multi-crystalline Si”, The 7th International Symposium on Advanced Science and Technology of Silicon Materials, (22 Nov. 2016).
招待講演：Y. Yoshida: ”Mössbauer-Spectroscopic-Microscope Studies on Direct Observations of Microstructure Formation Processes in Si-solar cells and Fe-Steels with recoil-free g-ray absorptions “, September 12. 2017, an invitation to a seminar talk from Prof. Dr. Dr.h.c. Peter Fratzl, Director, Department of Biomaterials, Max Planck Institute of Colloids and Interfaces, Research Campus Golm, 14424 Potsdam, Germany.
Y. Yoshida, Y. Kobayashi, A. Yoshida, X. Diao, S. Ogawa, K. Hayakawa, K. Yukihira, F. Shimura and F. Ambe, “In-Beam Mossbauer Spectroscopy after GeV-Ion Implantation at an On-line Projectile-Fragments Separator”, Int. Conf. on the Applications of Mossbauer Effect, Oxford, 2001.9.2.-7.
Y. Yoshida, “Direct Observation of Substitutional and Interstitial Fe atoms in Si by high-temperature and In-beam Mossbauer Spectroscopy” ECS symposium 2002, Salt Lake City, USA, 2002.10.24.
Yutaka Yoshida, Sigeru Ogawa and Kazuhiro Arikawa, “Direct Observation of Substitutional Fe Atoms in Si and SOI wafers at 1273 K”, Aarhus Denmark, ICDS-22 (International Conference on Defects in Semiconductors), 2003.7.28-8.1.
Y. Yoshida, “Direct Observation of Substitutional Fe Atoms in Si and SOI wafers at 1273 K” (invited), JSPS Belgium-Japan Binational Seminar, Osaka, 2003.12.1-3.
Yutaka Yoshida,Shigeru Ogawa and Kazuhiro Arikaw、“Mossbauer Study on Fe Impurities in Si Crystals”、The 4th International Symposium on Advanced Science and Technology of Silicon Materials(JSPS Si Symposium), Nov. 22-26, 2004,Kona, Hawaii, USA, (2004)
Y. Yoshida, S. Horie, K. Niira, K. Fukui and K. Shirasawa、“In-situ observation of iron atoms in multicrystalline silicon at 1273 K and 300 K by Mossbauer spectroscopy”、International Conference of Defects in Semiconductors (ICDS-23), 淡路島（ポスター発表）、2005年7月24日－29日
Y. Yoshida, Y. Kobayashi, K. Hayakawa, K. Yukihira, A. Yoshida, H. Ueno,F. Shimura and F. Ambe、“In-situ observation of substitutional and interstitial Fe atoms in Si after GeV-implantation: an in-beam Mossbauer study”、International Conference of Defects in Semiconductors (ICDS-23), 淡路島（口頭発表）、2005年7月24日－29日
Y. Yoshida, Y. Kobayashi, A.Yoshida, H. Ueno, K. Hayakawa, K. Yukihira,F. Shimura, and F. Ambe、“IThe formation process of substitutional Fe atoms via interstitial Fe atoms jumping into vacancies in Si”、International Conference of the Applications of Mossbauer Effect (ICAME 2005), Monotpellier, France（ポスター発表）、2005年9月4日－9日
Y. Yoshida, K. Arikawa and S. Ogawa、”Substitutional Fe atoms in Si”、International Conference of the Applications of Mossbauer Effect (ICAME 2005), Montpellier, France（ポスター発表）、2005年9月4日－9日
Y. Yoshida, Silicon Forum 2007, “Fe impurities in Si observed by Mössbauer Spectroscopy” (招待講演) 2007. Nov.12-14, Niigata.
Y. Yoshida, International Symposium on the Industrial Applications of the Mössbauer Effect, “Search for point defects in metals and semiconductors by Mössbauer Spectroscopy”, (招待講演) 2008. Aug.17-22, Budapest, Hungary.
International Symposium ”Kinetik und Dynamik im Lauf der Zeit”（ウィーン大学,2009年7月2日～3日）：“Mössbauer Spektroskopie Mikroskop fuer Eisen Atome” (招待講演)
Y. Yoshida, “Development and Applications of an Imaging Technique in Mössbauer Spectroscopy” (招待講演), Opening ceremony and International Symposium on Mossbauer Spectroscopy, 2010 June, Dalian, China,
Y. Yoshida, K. Hayakawa, K. Yukihira, M. Ichino, Y. Akiyama, H. Kumabe, H. Soejima, “Development and Applications of “Mössbauer Cameras” (招待講演), HFI/NQI国際会議, 2010年9月, CERN, Genève
Y. Yoshida, “Direct observations on Iron impurities in silicon solar cells by developing new in-situ techniques in Mössbauer spectroscopy: A new approach from physics” (招待講演), Nuclear and radiation Physics Section, Faculty of Science, 2010 September, KU Leuven
吉田 豊：In-Beam Mossbauer Study of Materials Science using RI-Beams, 日本原子力研究所、先端基礎研究センター・シンポジウム“New Evolution in the field of Mossbauer Spectroscopy”,1996.4.12.
Y. Yoshida, C. Yamamoto, K. Sato, F. E. Fujita and F. Shimura：High Temperature Mossbauer Study on Fe in Fe-Si and Si, Int. Conf. on Diffusion in Materials, Nordkirchen, 1996.8.5～9.
Y. Yoshida, Y. Masuda, H. Haslein, F. E. Fujita and H. Nakajima： High Temperature Mossbauer Study on the Fast Diffusion of Fe in b-TiFe Alloys, Int. Conf.on Diffusion in Materials, Nordkirchen, 1996.8.5～9.
Y. Yoshida, “メスバウア効果の応用のための国際会議 Rio de Janeiro, Brazil” にて基調招待講演：“Mossbauer spectroscopy to investigate jump processes on an atomistic scale“ 1997.9.14～20．
Y. Yoshida and N. Murase, “メスバウア効果の応用のための国際会議 Rio de Janeiro, Brazil” にてポスター発表、“Mossbauer spectroscopy under uni-axial stress”, 1997.9.14～20.
Y. Yoshida, N. Murase, T. Kakeshita and T. Saburi, “In-situ Mossbauer Study on the Nucleation Process of Martensitic Transformation in Fe68.3Ni31.7 Alloy“, Int. Conf. on Solid-Solid Phase Transformations `99, 1999.5
Y. Yoshida and N. Murase, “In-situ Observation of Stress-Induced Martensite Transformation in SUS304 Stainless Steel by Mossbauer Spectroscopy“, Int. Conf. on Solid-Solid Phase Transformations `99, 1999.5
K. Kobayashi, Y. Yoshida, A. Yoshida, Y. Watanabe, et al., “In-beam Mossbauer Study of 57Mn/57Fe in Si Following Projectile Fragmentation and Implantation“, Int. Conf. on the Applications of Mossbauer Effect, Garmisch-Partenkirchen, 1999.8.29.-9.3.
Y. Yoshida, K. Kobayashi, et al. , “In-beam Mossbauer Study of 57Fe in Solid Ar Following Coulomb-Excitation and Recoil-Implantation“, Int. Conf. on the Applications of Mossbauer Effect, Garmisch-Partenkirchen, 1999.8.29.-9.3.
X. Diao, Y. Yoshida, K. Hayakawa, F. Shimura, T. Kambara and A. Iwase,“IR Study on the V-O pairs and Oxygen-Interstitials in CZ-Si irradiated by 3.5 GeV-Xe Ions”, 日本物理学会春の分科会、2000.3.24.
Y. Yoshida, Y. Kobayashi, K. Hayakawa, K. Yukihira, A. Yoshida, F. Shimura, et al., “In-Beam Mossbauer Study on Interstitial and Substitutional 57Mn/57Fe Jumps in Si”, International Conference on Diffusion of Materials, 2000.7.17.
Y. Yoshida, Y. Kobayashi, F. Ambe, E. Yagi, A. Seeger et.al, “Direct Observation of Self-Interstitial Motion in Pure Iron by 56Fe (d,p) 57Fe In-Beam Mossbauer Spectroscopy”, International Conference on Diffusion of Materials, 2000.7.17.
K. Kobayashi, M. Ohmura, Y. Okada and Y. Yoshida, “A Study of Magneto-Volume Effects in Sm2Fe17Nx (0
Y. Yoshida: “Mossbauer Study on Fe Diffusion and Segregations in Si”, 3rd. International Symposium on Advanced Science and Technology of Silicon Materials, (招待講演) 日本学術振興会, 2000.9.21.
Y. Yoshida, Y. Kobayashi, K. Hayakawa, F. Shimura, et al.: “In-Beam Mossbauer Study on Interstitial and Substitutional 57Mn/57Fe Jumps in Si”, 3rd. International Symposium on Advanced Science and Technology of Silicon Materials, 日本学術振興会, 2000.9.21..
X. Diao, Y. Yoshida, K. Hayakawa, F. Shimura, et al.: “Lattice Defects produced by GeV-Ion Irradiations in Si”, 3rd. International Symposium on Advanced Science and Technology of Silicon Materials, 日本学術振興会, 2000.9.21.
Y. Yoshida, S. Ogawa, S. Endou, T. Shimura and M. Umeno: “Direct Observation of the Gettering Processes of Fe Atoms in SOI Wafers by Mossbauer Spectroscopy”, 3rd. International Symposium on Advanced Science and Technology of Silicon Materials, 日本学術振興会, 2000.9.23.
