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Our research is presently focused on iron segregation and diffusion processes in silicon materials and nanomaterials. We combine different experimental methods and instruments for Mossbauer spectroscopy, which we have been continuously developing in our group. A high temperature furnace, an Instron-type tensile-test machine, a conversion electron detector using micro-channel plates (MCP) connected to UHV deposition chamber are in operation at our laboratory.

In addition, as a joint venture with Dr. Yoshio Kobayashi, RIKEN, we are working with in-beam Mossbauer spectroscopy immediately after Coulomb excitation and recoil-implantation, (d, p) reaction and implantation of projectile nuclear fragments using an on-line isotope separator at the RIKEN. Two excellent technicians, Kenichi Yukihira and Kazuo Hayakawa, and students in master and undergraduate course contribute strongly to our research projects.

Our final goal is to achieve an in-situ observation of iron atoms in different materials to understand atomic motions, chemical reactions and formation processes of nano-structures under different circumstances such as high temperatures, uniaxial stress and highly energetic ion irradiation (several GeV). For characterization we employ a wide range of techniques, X-ray diffraction, and microscopies such as SEM, TEM, AFM, STM, MFM, and infrared spectrometer.

Our recent results on Fe in Silicon materials can be found in PV 2003-03 of ECS, ALTECH 2003 “Analytical and Diagonistic Techniques for Semiconductor Materials, Devices, and Processes”, ed. B. O. Kolbesen, C. L. Claeys, P. Stallhofer, and F. Tardif, pp. 479.

Presently, we are developing “a 57Fe Mossbauer microscope (two-dimensional position-sensitive spectrometer), which should be able to resolve Fe-contain structures down to a scale of several 100 nanometers.